1991 Solar World Congress by S. M. A. Burley, M. Coleman, M. E. Arden

By S. M. A. Burley, M. Coleman, M. E. Arden

The ISES sun international Congress, held in Denver, Colorado in August 1991 attracted over one thousand individuals from approximately 70 international locations, making it the most important solar power occasion of its style on the earth. As a long-lasting list of that congress, 630 papers are released right here in four volumes of complaints. quantity 1 is devoted to solar power, biofuels and renewable assets. quantity 2 includes papers on lively sun and sun warmth. Passive sun, socio-economic and academic facets are thought of in quantity three, and at last the plenary classes, and the Farrington Daniels lecture are released in quantity four. 1991 sun global Congress provides the very newest advances within the usage of other strength assets and know-how.

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From the qualitatively similar behaviour between I (790) and I (890) , we can infer that whenever there is any release of hydrogen, the isolated Si-N sites capture some resulting in the above mentioned transformation. This is possible only if, at least, a short range diffusion of hydrogen takes place from (Si=H ) and (Si=H ) sites. 2 2 n _, lUU' b o ~ 80o en M O 60- w o 40 O ^s o S 20 * M 100 200 300 T (°C) 400 500 o o m o O *O * o a * o- 100 600 -,— 200 300 T (°C) * * * * 400 600 600 Fig. 2. Variation of the integrated intensities function of annealing temperature T .

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We believe now following explanation. As is well known, density of interface state at SiC>2-(100)Si is one order smaller than that of (lll)Si. 550 > E 500 i 450 400 Rn=76mW/cm2 3-0 2-5 10 20 30 40 50 60 Oxidation time(min) 2-0 Fig. 4. Open circuit voltage for the different crystal orientation. c •85 £•80 »a -©• •75|•70 375 395 415 435 Oxidation Temp. (°G) Fig. 3. Dependences of Voc, n and B on the oxidation temperature. 05 01 (eV) Fig. 5. Dependence of Voc on *B. 31 If the thickness of oxide layer S is same , the n-value of (100)Si is smaller than that of ( l l l ) S i .

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