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Extra info for Advanced High Speed Devices
Rev. Lett. 89, 226804 (2002). 12. K. Hieke, J. Wesstrom, T. Palm, B. Stalnacke, and B. Stoltz, Vol 42, No 7-8, Solid-State Electronics pp 1115-1119, 1998 International Journal of High Speed Electronics and Systems Vol. 19, No. jp TAKUYA NISHIMURA Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Sendai, Miyagi 980-8577, Japan YUKI TSUDA Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Sendai, Miyagi 980-8577, Japan YAHYA MOUBARAK MEZIANI Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Sendai, Miyagi 980-8577, Japan TETSUYA SUEMITSU Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Sendai, Miyagi 980-8577, Japan EIICHI SANO Research Center for Integrated Quantum Electronics, Hokkaido University, N13W8, Sapporo, Hokkaido 060-8628, Japan Two dimensional plasmons in submicron transistors have attracted much attention due to their nature of promoting emission/detection of electromagnetic radiation in the terahertz range.
After Ref. ) Emission and Intensity Modulation of Terahertz Electromagnetic Radiation 39 converted to the transverse monotonic electric field in the outside the device (upper portion in Fig. 5). The results clearly show the standing wave oscillation inside the cavity and forward propagating quasi-transverse electromagnetic (TEM) waves outside in air. In order to examine how the double gate grating and vertical cavity structures contribute to the field emission properties, artificial structures without double gate grating and/or terahertz mirror are prepared for, and compared their impulse responses to that of original structure by using Maxwell’s FDTD simulator6.
As well the transition region requires more study before amplifiers operating in this region can be well designed. Figure 4. a) IV Current response as a function of drain voltage for multiple NEGATIVE push pull gate voltages (shown in reference to the left gate). Note that for negative gate voltages the current increases as gate voltage increases. b) IV Current response as a function of drain voltage for multiple POSITIVE push pull gate voltages (shown in reference to the left gate). Note that for positive gate voltages the current decreases as gate voltage increases.